Optical, Electrical and Thermoelectrical Studies of Bi2S3 thin Film, Annealed by dip technique

In the present paper, we have reported the room temperature growth of bismuth sulphide (Bi2S3) thin films by dip method and annealed at different temperature. The films were deposited from a reaction bath containing bismuth nitrate, glycine and sodium thiosulphate. We have analyzed optical, electrical and thermoelectrial properties of Bi2S3 thin films. From optical absorption spectra the band gap of the material is estimated to be 1.54 eV at 348 K. 1.49 and 1.44 eV at 423K and 473K. . The value of specific conductance is of the order of 10-6(Ω cm)-1.Thermoelectric power was found to be 378.45 to 420.27μv/K at 300- 525 K. for sample annealed at 348 K. and 473 K thermoelectric power changes from 390.45 to 435μv/K. The values of series and shunt resistance have been observed to be 211 and 628 Ω annealed at 348 K. and 204 and 618 Ω sample annealed at 473 K.