Growth Conditions, Structural Characterization and Structural Studies of Undoped and Doped Zinc Oxide Thin Films Grown by Chemical Bath Technique

In the present scenario, Intensive investigations are going on not only in the field of basic thin film physics, but also in material science, thin film circuit designs, production engineering concerning thin films, etc.., to cope with the demand of industries . Film properties are also sensitive not only to their structures but also to many parameters including thickness especially in thin film regions, hence a stringent control of the latter is imperative for reproducible electronic, dielectric optical and other properties. Zinc oxide has become a particularly interesting metal oxide material because of its unique properties. ZnO is a semiconductor with a wide band gap (3.3 eV), large exciton binding energy, abundant in nature and environmentally friendly. These characteristics make this material attractive for many applications such as solar cells, optical coatings, photo catalysts, antibacterial activities, electrical devices, active medium in UV semiconductor lasers and in gas sensors, solid state emission, chemical sensors, piezoelectric transducers, transparent electrodes, photo-catalysts, electroluminescent devices. Doping of nano materials with sutable impurities such as In and Al, has given rise to a new class of nano materials whose structural, optical and electrical properties differ from those of the corresponding host nano-materials. ZnO thin films are prepared by different techniques such as metal organic chemical vapor deposition, sol–gel, thermal evaporation, oxidation and anodizing. This paper prescribe to undoped, cadmium doped ZnO(CZO) and Aluminium doped ZnO(AZO) thin films by a chemical solution grown double dip technique for fabrication of a gas sensors and photovoltaic.