CdSe thin film: Synthesis & Characterization
| Vol-4 | Issue-01 | January 2019 | Published Online: 20 January 2019 PDF ( 334 KB ) | ||
| Author(s) | ||
| V.D.Bhabad 1 | ||
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1Asst.Professor, Dept. of Chemistry, BN ASC Collge, Pen, MS |
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| Abstract | ||
CdSe thin films have been deposited by dip technique using trichloroacetic acid as a complexing agent. The structural characterization of films have been studied by X-Ray diffraction. X-ray diffraction pattern prove crystallinity of the deposited films that crystallize in the hexagonal phase of CdSe. The films show high absorption and band gap value which were found to be 2.10eV. The specific conductivity of the film was found out to be 1.234x10-7 ohm cm-1 at 300 K. |
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| Keywords | ||
| Semiconductor, Thin films, X-Ray diffraction, Conductivity, Optical | ||
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