Growth and Characterization of Thioureasquarate

Vol-3 | Issue-07 | July 2018 | Published Online: 05 July 2018    PDF ( 430 KB )
DOI: https://doi.org/10.5281/zenodo.1305348
Author(s)
B. Ravindran 1; N. Menaka 2; S. Malini 3; S. Ambikavathy 4; M. Mariappan 5; S.Kamali 6

1Assistant Professor, PG and Research Department of Physics, Thiru. Vi. Ka. Govt. Arts College, Thiruvarur (India)

2Research Scholar, PG and Research Department of Physics, Thiru. Vi. Ka. Govt. Arts College, Thiruvarur (India)

3Research Scholar, PG and Research Department of Physics, Thiru. Vi. Ka. Govt. Arts College, Thiruvarur (India)

4Research Scholar, PG and Research Department of Physics, Thiru. Vi. Ka. Govt. Arts College, Thiruvarur (India)

5Assistant Professor, PG and Research Department of Chemistry, Thiru. Vi. Ka. Govt. Arts College, Thiruvarur (India)

6Assistant Professor, Department of Science and Humanities, University College of Engineering, Thirukkuvalai (India)

Abstract

By slow evaporation solution growth technique an organic NLO material named as Thioureasquarate was grown using ethanol at room temperature. Stirred mixture of squaric acid and thiourea was taken in equimolar ratio and placed in an open area without any disturbances. Various characterization techniques were used to check the suitability of the grown crystal for device fabrication. UV-Vis-NIR, XRD, TG-DSC, SHG and FTIR analyses were used to characterize the grown crystal. Identification of functional group was done by the FTIR analysis. The occurred transparency cut off wavelength 330nm of the crystal is shown in the UV spectrum. The thermal stability was determined by TG-DSC analysis. Kurtz-Perry SHG test confirms that the grown crystal is a promising NLO material. Finally the suitability of the grown crystal for optical device fabrication was confirmed by the observed results.

Keywords
UV-Vis-NIR, XRD, TG-DSC, SHG, FTIR, SHG test
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